基于RTP热处理的Bi/Te多层膜的热电性能

Thermoelectricity of Bi/Te multilayer thin films based on RTP annealing process

为改善薄膜热电材料的热电性能,通过磁控溅射制备多层Bi/Te薄膜材料,并用常压高温环境对样品进行快速热退火(RTP),以期在较短时间内获得更高的热电参数.结果表明:Seebeck系数与功率因数最大值与退火温度呈正相关,在400℃退火2~11min,Seebeck系数极大值为-190.41μV/K,功率因数最大值为8.28μW/(K^2·m);随着退火温度的升高,Seebeck系数、载流子浓度、载流子迁移率、电导率和功率因数的振荡幅度也随之加大,并且载流子浓度与Seebeck系数呈反比关系,与电导率呈正比关系,这说明通过改变材料结构和高温快速退火可以得到较高的热电参数,同时保证薄膜的完整性.

In order to improve the performance of thermoelectric thin film material, the multi-layer Bi/Te film was prepared through the magnetron sputtering and the rapid thermal process in atmospheric temperature and expected to ob-tain the higher thermal parameters in a relatively short time. The results show that the maximum values of See-beck coefficient and power factor are positively related with annealing temperature. Annealing 2-11 min at 400℃,the maximum value of Seebeck coefficient is -190.41 μ V/K, maximum power factor is 8.28 μ W ·K -2·m-1. With the increase of annealing temperature, the oscillation amplitude of the Seebeck coefficient, carrier concen-tration, carrier mobility and the conductivity and power factor increase. The carrier concentration is inversely pro-portional to the Seebeck coefficient and is proportional to the conductivity. It illustrates that by changing the ma-terial structure and rapidly annealing at high temperature the higher thermoelectric parameters can be obtained, at the same time ensure the integrity of the film.