在格芯22 FDSOI中后栅偏压可调及对模拟电路设计PPA优势

Back Gate Bias, PPA advantages for Analog Design in GF 22FDSOI

格芯GLOBALFOUNDRIES 22FDX~(22nm FDSOI)工艺是一个差异化的工艺,它能有Fin FET工艺那样的性能,也能有28nm工艺设计技术上的简单和成本优势。这个工艺所具有的后栅偏压可调(back-gate bias)的功能及其优化功耗、性能和面积(Power,Performance and Area,PPA)的特性能提供巨大的机会,能在广阔的应用市场去设计目前已经存在的并差异化的产品。在这篇论文中,我们会讨论到利用这种工艺特征以及电路设计和工艺技术的相互优化,从而设计出基于22FDX~工艺最好的IP,设计方法和验收标准。并且分析在模拟电路以及混合信号电路设计中相对于常规技术,利用后栅偏压可调功能的优化PPA差异性技术。我们探索和设计了三个不同电路,包括运算跨导放大器(Operational Transconductance Amplifier,OTA)、比较器(Compactor)、数控振荡器(Digitally Controlled Oscillator,DCO)。

GLOBALFOUNDRIES 22FDX （ 22nm FDSOI ） technology is a differentiating technology in advanced CMOS process where FinFET like performance can be achieved while the overall architecture offers 28nm like sim- plicity in design technique and cost structure. The power, performance and area （ PPA ） optimization of 22FDSOI with the additional back-gate bias capability offers tremendous opportunities to build exciting and differentiating product in the wide range of applications. In this paper, we will talk about the technology features, the design and technology Co-optimization in order to build Best in Class IP, the design methodology and sign-off criteria for 22FDX~ as well as different PPA techniques using conventional and back-gate bias for analog and mixed signal circuit designs. Three different circuits were explored and designed： Operational Transconductance Amplifier （ OTA ）, Comparator, and Digitally Controlled Oscillator （ DCO ）.