原子层沉积增强微纳结构硅电池的光电性能

Enhanced Photovoltaic Performance of Micro-Nano Structured Silicon Solar Cells by Atomic Layer Deposition

采用原子层沉积技术在硅表面沉积氧化铝(Al_2O_3)作为钝化层、掺铝氧化锌(AZO)薄膜作为透明电极,将其应用于有金字塔结构和黑硅结构的光伏电池.通过对反射光谱、电流-电压(J-V)曲线、外量子效率等测试,比较平面硅、金字塔绒面硅和黑硅3种不同材料结构电池的光电性能.通过在金字塔结构硅表面沉积10次循环的Al_2O_3作为钝化层,180 nm厚的AZO作为透明电极,光电转换效率达到11.23%,短路电流28.72 m A/cm^2,开路电压0.548 V,填充因子0.71.将该钝化层和透明电极应用于黑硅电池上获得了8.89%的光电转换效率.结果表明,掺铝氧化锌作为透明电极、Al_2O_3作为钝化层,对微纳结构硅电池性能有明显提高.

Al2 O3 as a passivation layer and aluminum doped ZnO(AZO) film as the transparent electrode were deposited on silicon solar cells by atomic layer deposition. The photoelectric properties of different silicon solar cells(planar,pyramids,and black silicon) were analyzed by measuring their reflection spectra,J-V curves,and external quantum efficiencies. An optimized film consisting of 10 cycles of Al_2O_3 and 180 nm AZO was deposited on pyramidal silicon solar cells,and the photoelectric conversion efficiency(PCE) reached 11.23%,wherein short circuit current density was 28.72 m A/cm2,open circuit voltage was 0.548 V,and filling factor was 0.71. When this optimized film was deposited on black silicon solar cells,the PCE reached 8.89%. The results show that photovoltaic performance of micro-nano structured silicon solar cells can be significantly improved by utilizing Al2 O3 as a passivation layer and AZO film as the transparent electrode.