摘要
The total dose effect of ^(60)Co γ-rays on 0.8μm H-gate partially depleted-silicon-on-insulator NMOS devices was investigated at different irradiation doses. The results show that the shift in saturation current at high dose rate is greater than that at low dose rate, due to increase in interface-state density with decreasing dose rate; the scattering effect of interface state on electrons in the channel causes degradation in carrier mobility; and the body current and transconductance of the back gate enhance low-doserate sensitivity when the irradiation is under OFF-bias. A double transconductance peak is observed at 3 kGy(Si)under high dose rates.
The total dose effect of 60Co y-rays on H-gate partially depleted-silicon-on-insulator 0.8-μm NMOS devices was investigated at different irradiation doses. The results show that the shift in saturation current at high dose rate is greater than that at low dose rate, due to increase in interface-state density with decreasing dose rate; the scattering effect of interface state on electrons in the channel causes degradation in cartier mobility; and the body current and transconductance of the back gate enhance low-dose- rate sensitivity when the irradiation is under OFF-bias. A double transconductance peak is observed at 3 kGy（Si） under high dose rates.
基金
supported by the National Natural Science Foundation of China(No.61376099)
the Foundation for Fundamental Research of China(No.JSZL2016110B003)
the Major Fundamental Research Program of Shaanxi(No.2017ZDJC-26)
