摘要
异质集成技术是微系统的核心技术,分为混合异质集成技术和单片异质集成技术。单片异质集成技术因具有较高的集成度,逐渐成为研究热点。从两个方面介绍了微系统中单片异质集成技术的研究现状和进展。在微电子器件方面,主要发展方向为Ⅲ-Ⅴ族和Si基CMOS电子器件的单片异质集成;在光电子、MEMS器件方面,主要发展方向为Ⅲ-Ⅴ族光电器件、Si基CMOS电子器件和MEMS器件等的单片异质集成。最后,总结出异质集成技术面临的挑战和丞待解决的问题。
Heterogeneous integration technology was the core of the microsystems,and it was divided into hybrid and monolithic integration.Due to its high integration density,the monolithic integration had gradually become a research hotspot.The status and progress of the monolithic heterogeneous integration for microsystems were reviewed.Two aspects of the monolithic heterogeneous integration were discussed.In the microelectronic device,developments were mainly focused on researches on monolithic heterogeneous integration ofⅢ-Ⅴ devices and Sibased CMOS devices.In the optoelectronic and MEMS devices,developments were mainly focused on researches on monolithic heterogeneous integration of Ⅲ-Ⅴ photoelectric device,Si-based CMOS devices and MEMS devices.Then the present situation of monolithic heterogeneous integration in China was introduced briefly.Lastly the challenges and the issues to be solved in the monolithic heterogeneous integration were summarized.
作者
吕伟
LV Wei(No. 38 Research Institute, China Electronics Technology Group Corporation, Hefei 230088, P. R. Chin)
出处
《微电子学》
CSCD
北大核心
2017年第5期701-705,共5页
Microelectronics