一种电场调制载流子存储槽栅双极型晶体管

An Electric Field Modulation Carrier Storage Trench Bipolar Transistor

提出了一种性能优良的电场调制载流子存储槽栅双极型晶体管(CSTBT)。结合电场调制原理,在器件的载流子存储(CS)层引入P掺杂条,改善器件栅极下方氧化硅拐角处的电场分布,防止器件提前发生雪崩击穿,提高了器件的击穿电压。器件处于关断状态时,内部大量的空穴载流子通过CS层中未完全耗尽的P掺杂条到达发射极,抑制了CS层阻挡空穴的作用,有效提高了器件的关断速度。与传统CSTBT器件相比,改进器件的击穿电压值提高了379V,关断时间缩短了19.1%,器件性能大幅提高。

Carrier storage trench bipolar transistor（CSTBT）with electric-field modulation for high performance was proposed.Guided under the electric field modulation principle,the P-pillars were inserted into the carrier storage（CS）layer,which could modify the electric field distribution at the corner of silicon oxide below the gate electrode,preventing the avalanche breakdown in advance and improving the breakdown voltage of the device.When the device was turned off,a large number of internal hole carriers could reach the emitter through the P-pillars which were not fully depleted in the CS layer.Then the hole-blocked effect of the CS layer could be suppressed,which had effectively improved the turn-off speed of the device.Compared with conventional CSTBT,the proposed structure increased the breakdown voltage by 379 Vand shortened the turn-off time by 19.1%.The performances of the device had been improved greatly.