微波用于抑制光刻胶纳米线条倒伏的研究

Research on Suppressing the Collapse of Photoresist Nanowires by Microwave Drying Process

针对半导体工艺中去离子水的表面张力导致显影干燥过程中光刻胶纳米线条容易发生倒伏的问题,采用了微波干燥方法,以抑制光刻胶纳米线条倒伏。利用微波的热效应和非热效应,降低去离子水的表面张力,使光刻胶纳米线条上的去离子水均匀、快速地蒸发,有效抑制了光刻胶纳米线条的倒伏。与氮气干燥处理的传统方法相比,该方法能使高130nm、宽15nm的光刻胶纳米线条不发生倒伏,效果明显。这表明,该方法是可行和有效的。

Photoresist nanowires might collapse due to the surface tension of deionized water in the drying process after development.To solve this problem,the microwave drying process was adopted to improve the quality of photoresist nanowires.The microwave drying scheme was applied here because the thermal effect and non-thermal effect of microwave were combined.The microwave drying scheme could reduce the surface tension of deionized water on the photoresist nanowires,and make the deionized water evaporate evenly and rapidly.Therefore,the collapse of photoresist nanowires could be inhibited.Compared with the traditional method of nitrogen drying,this method could dry the photoresist lines with a height of 130 nm and a width of 15 nm,and there was no collapse of photoresist lines.It showed an obvious effect.This method was feasible and valid.