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基于滤波器综合分析法的118 GHz单刀二掷开关(英文)

118 GHz single pole double throw switches using filter synthesis method
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摘要 采用滤波器综合分析方法,基于分立式AlGaAs/GaAs异质结PIN二极管,根据其等效寄生参数,综合出单刀二掷开关集总参数滤波器模型,以此分析其等效分布参数电路,设计出了118GHz星载辐射计用单刀二掷开关准单片,开关电路尺寸6×2.5×0.1mm^3.通过开关模块封装用波导-微带过渡和键合金带插损的分析研究,研制出了低插损的118GHz开关模块,在110~120GHz,测得开关插损小于3.0dB,插损典型值2.6dB;开关隔离度大于22dB;开关响应时间、导通时间、关断时间、恢复时间分别小于18ns、20ns、10ns、18ns,该准单片作为通道切换开关可集成应用于118GHz收发组件中. 118 GHz single pole double throw( SPDT) switches were designed and tested for radiometers in satellite applications. Filter synthesis method was proposed for the switches analysis. Based on equivalent circuit of the discrete AlG aA s/GaA s heterojunction PIN diodes,lumped element filter model of the switches was synthesized and its equivalent distributed circuit was developed. The size of the developed 118 GHz quasi-MMIC SPDT switch circuit is 6 × 2. 5 × 0. 1 mm3. For the packaged SPDT switch module,insertion loss( IL) introduced by mounting deviation of the waveguide microstrip transitions and the bonded ribbons is discussed. In the frequency range 110 ~ 120 GHz,the IL of the switch modules is less than 3. 0 dB and typical value is 2. 6 dB,and their isolation is higher than 22 dB. Response time,switch on time,switch off time and recovery time of the switches are lower than 18 ns,20 ns,10 ns and 18 ns,respectively. The 118 GHz switches can be widely used in transceiver systems.
出处 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2017年第5期526-533,共8页 Journal of Infrared and Millimeter Waves
基金 Jiangsu Innovation&Entrepreneurship Group Talents Plan
关键词 单刀二掷开关 PIN二极管 插损 隔离度 SPDT switch, PIN diode, insertion loss, isolation
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  • 1金杰,冯军,盛志伟,王志功.0.18μm CMOS 10Gb/s光接收机限幅放大器[J].电子学报,2004,32(8):1393-1395. 被引量:10
  • 2顾晓春.X波段小型化无源限幅器的研究[J].现代雷达,2005,27(8):59-61. 被引量:4
  • 3陈新宇,蒋幼泉,许正荣,黄子乾.砷化镓PIN管单片限幅器[J].固体电子学研究与进展,2006,26(4). 被引量:2
  • 4GOLDIE H.A 2-kW average power X-band receiver protector[J] . IEEE Transactions on Electron Devices, 1977, 24( 1) : 53 - 55.
  • 5GOLDIE H, PAWL S. An RF-primed all-halogen gas plasma microwave high power receiver protector[AJ. IEEE MTT-S International Microwave Symposium Digest[cJ . Dallas: IEEE, 1982.69 - 71.
  • 6GOlDIE H. A high power broadband millimeter-wave switch and receiver protector[AJ . IEEE MTT-S International Mi?crowave Symposium Digest[CJ. Ottawa: IEEE, 1987.354 - 356.
  • 7UEBELE G S. Characteristics of ferrite microwave limiters[J]. IEEE Transactions on Microwave Theory and Tech?niques, 1959,7(1): 18 - 23.
  • 8CARLISLE T P. X-band high-power multipactor receiver pro?tector[J] . IEEE Transactions on Microwave Theory and Tech?niques, 1978,26(5) :345 - 347.
  • 9STITZER S N,CARTER P S,GOLDIE H.A high power X?band frequency selective passive YIG limiter[AJ . IEEE MTT?S International Microwave Symposium Digest[CJ. San Diego: IEEE, 1977.528 - 531.
  • 10SARKAR B K. Cutoff frequency of microwave coaxial multi?mode limiter[J] . IEEE Transactions on Electron Devices, 1982,29(3) :463 - 464.

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