摘要
对纳米级金属氧化物半导体场效应管器件提出了改进的小信号模型.该改进模型中综合考虑了馈线的趋肤效应和器件多胞结构的影响.提取过程中,根据可缩放规律,由传统模型的参数推导出元胞参数.将模型应用于8×0.6×12μm(栅指数×栅宽×元胞数量)、栅长为90 nm的MOSFET器件在1~40 GHz范围内的建模,测试所得S参数和模型仿真所得S参数能够高度地吻合.
An improved small-signal model for nanometer metal-oxide-semiconductor field-effect transistor( MOSFET) device is presented in this paper. The skin effect and multiple-cell effect are both taken into account. In the extracting procedure,the parameters of elementary cells are determined from the conventional model based on the scalable rules. This small-signal model was validated by the good agreement between measured and simulated S-parameters of 8 × 0. 6 × 12 μm( number of gate fingers × unit gatewidth × cells) 90-nm gatelength MOSFET under three bias points up to 40 GHz.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2017年第5期550-553,562,共5页
Journal of Infrared and Millimeter Waves
基金
Supported by the National Natural Science Foundation of China(61474044)
关键词
半导体技术
小信号模型
模型参数提取
趋肤效应
多胞模型
semi-conductor technology, small-signal model, parameter extraction of model, skin effect, multi-cellmodel