一种基于SiGe工艺的多功能下变频芯片的设计与实现

Design of a Microminiature SiGe Down-Conversion Mixer Chip

随着射频收发组件小型化的要求越来越高,射频单片集成电路向小型化和多功能化方向发展。基于TSMC 0.35μm SiGe工艺成功研制了一款多功能下变频芯片。片上集成了正交(I/Q)混频器、有源巴伦、多相滤波器、输出缓冲器和LDO。通过对整个电路合理的版图设计,实现了芯片的小型化,芯片裸片尺寸仅为2.2 mm×1.5mm。测试结果表明,多功能下变频芯片射频和本振频率范围为900~1300 MHz,中频频率范围100~500 MHz,具有良好的正交宽中频输出特性,匹配良好;变频增益大于-1 dB,1 dB压缩输入功率可达到8 dBm,线性度良好;本振输入功率0 dBm,整个电路功耗为0.45 W。

With the increasing demand of miniaturiazing the radio frequency transceiver receiver（T/R） modules,the radio frequency integrated circuit（ RFICs） are moving towards the miniaturization and mutifunction.Based on the TSMC 0.35μm SiGe process,a microminiature SiGe down-conversion mixer chip is developed successfully.The chip is integrated with the I/Q mixer,active balun,multiphase filter,output buffer circuit.In order to miniaturize the chip,the layout is optimized,the die size is 2.2 mm×1.5 mm.The measurement results show that the broadband frequency of I/Q IFs is 100 ~ 500 MHz,and the mixer has a good circuit matching; the gain is larger than-1 dB and the 1 dB compressed input power is up to 8 dBm; so this is a high linearity wideband down-conversion mixer.LO power is 0 dBm,the power consumption of circuit is 0.45 W.