小尺寸栅极HEMT器件结温测量

Junction Temperature Measurement for HEMT Devices with Small Size Gate

用现有的红外法测量的GaN基HEMT器件结温,比实际最高温度点的温度低。而用喇曼法测量结温对设备要求高且不易于操作。针对现有技术对GaN基HEMT器件结温的测量存在一定困难的问题,设计了一款HEMT器件匹配电路。利用红外热像仪测量HEMT器件的结温升高,并结合物理数值模拟仿真,提出一种小尺寸栅极结温升高测量方法。结果表明,建立正确的仿真模型,可以得到不同栅极长度范围内的温度。通过这种方法可以测量出更接近实际的结温,为之后研究加载功率与壳温对Al GaN/GaN HEMT器件热阻的影响奠定了理论基础,并且为实际工作中热特性研究提供了参考依据。

The junction temperature of the GaN-based HEMT devices measured by the existing infrared method is lower than the actual maximum temperature point. The measurement of junction tempera ture by Raman method has high requirements for equipment and is difficult to operate. Aiming at the problem that there are some difficulties in the measurement of junction temperature of GaN-based HEMT devices with the existing technology,a HEMT device matching circuit was designed. The junction temperature rise of HEMT devices was measured by using the infrared thermal imager. Combining with the physical numerical simulation,a new method of measuring the junction temperature of small size gate was proposed. The results show that the correct simulation model can be used to obtain the temperatures at different gate lengths. Through this method,the measured junction temperature is closer to the actual one,which lays a theoretical foundation for the study of the influence of loading power and the shell temperature on the thermal resistance of Al GaN/GaN HEMT devices,and provides a reference for the study of thermal characteristics in practical work.