衬底温度对共溅射法制备BaSi_2薄膜的影响

Effect of Substrate Temperature on Preparation of BaSi_2 Film by Co-sputtering Method

研究衬底温度对采用Ba靶和Si靶共溅射制备BaSi_2薄膜的影响.采用X射线衍射仪和扫描电子显微镜对在不同衬底温度条件下制备的薄膜的微观结构组分和表面形貌进行表征与分析.结果表明,衬底温度在500℃以下时Ba和Si共沉积在Si(111)衬底上生成的为非晶,结合后续的真空退火生成BaSi_2多晶薄膜.衬底温度是制备优质BaSi_2薄膜的关键因素,衬底温度高于600℃时,共溅射法能够直接生成BaSi_2薄膜.

The effect of substrate temperature on preparation of BaSi2 film by co-sputtering of Ba and Si targets is studied. The chemical composition and surface morphology of BaSi2 film are characterized by X-ray diffraction （XRD） and scanning electron micro- scope （SEM）, respectively. The results show that amorphous phase were observed on Si （111 ） substrates by co-sputtering of Ba and Si targets if substrate temperature is below 500 ℃. However, polycrystalline films of BaSi2 are synthesized due to subsequent annealing in vacuo. Substrate temperature is a key factor to prepare BaSi2 film. BaSi2 film can be directly synthesized by co-sputtering method if substrate temperature is over 600℃.