MSM结构TiO_2基紫外探测器的制备及光电特性研究（英文）

Preparation and Photoelectric Properties of Metal-Semiconductor-Metal TiO_2 Ultraviolet Detectors

采用RF磁控溅射技术在石英衬底上生长了厚度可调的锐钛矿相TiO_2薄膜,继而采用光刻技术在薄膜上生长了Ag叉指电极,获得了MSM结构TiO_2基紫外探测器。I-V特性测试结果表明,Ag与TiO_2之间表现出优良的欧姆接触特性,所制备探测器为欧姆接触。此外,TiO_2薄膜厚度对探测器的光电性能影响显著,当薄膜厚度达到197 nm时,光电性能达到最高。此时,光电流高出暗电流近2.5个数量级,紫外光区的响应度高出可见光区近2个数量级。所制备Ag/TiO_2MSM紫外探测器表现出明显的光敏性和可见盲特性。

Anatase TiO_2 thin films were grown on quartz substrates by RF magnetron sputtering. Metal-semiconductor-metal（MSM） detectors with Ag IDT electrodes were then fabricated. The measurement of the I-V characteristics for the detectors shows good ohmic contact. Results indicate that the thickness of TiO_2 layer has an obvious effect on the photoelectronic properties. When TiO_2 film thickness is 197 nm, the photocurrent is nearly 2.5 orders of magnitude higher than the dark current and the photoresponse in ultraviolet region is nearly 2 orders of magnitude higher than in visible light region. The high sensitivity and visible blind properties of the obtained devices indicate their potential application as UV detectors with high efficiency and low cost.