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溶胶-凝胶法制备疏水型超低折射率膜层材料 被引量:4

Sol-gel Preparation of Hydrophobic Silica Coating-materials with Ultralow Refractive Index
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摘要 以正硅酸乙酯(TEOS)和甲基三乙氧基硅烷(MTES)为共同前驱体,羟丙基-β-环糊精(HPCD)为致孔剂,水和乙醇为溶剂,氨水为催化剂,采用溶胶-凝胶法制备了HPCD-Si O2溶胶.溶胶经过六甲基二硅氮烷(HMDS)改性后,制得疏水型超低折射率膜层,其最低折射率可达1.05,静态水接触角从66.4°上升至128.7°.以羟丙基-β-环糊精为致孔剂制得的膜层孔径约为4 nm,因而膜层不会因为孔径接近光波长的1/4而引起散射.与传统的致孔剂泊洛沙姆(F127)等相比,羟丙基-β-环糊精具有致孔效率高及折射率更低等优点,在模板剂领域具有广泛的应用前景. Using methyltriethoxysilane(MTES), tetraethylorthosilicate(TEOS) as co-precursors and hydroxypropyl-β-cyclodextrin(HPCD) as porogen,ultralow refractive index films were prepared based on a base-catalysed sol-gel process. After further modification by hexamethylisilazane(HMDS),the lowest refractive index of these silica coatings obtained from the hybrid sol were 1. 05 and the static water contact angles of the coatings increased from 66. 4° to 128. 7°. The data showed that the films prepared with HPCD as porogen got a pore diameter around 4 nm. Compared with those templates such as poloxamer(F127),HPCD not only perform well in decreasing the refractive index of films,but also eliminate light scattering caused by mesopore of the film,will have potential value in the field of surfactant-templated methods.
作者 何玫莹 罗健辉 杨博文 夏碧波 李远洋 张书铭 江波 HE Meiying LUO Jianhui YANG Bowen XIA Bibo LI Yuanyang ZHANG Shuming JIANG Bol(Key Laboratory of Green Chemistry and Technology, College of Chemistry, Siehuan University, Chengdu 610064, China Research Institute of Petroleum Exploration and Development, PetroChina, Beijing 100083, China Key lxtboratory of Nano Chemistry, China National Packaging Corporation, Beijing 100083, China)
出处 《高等学校化学学报》 SCIE EI CAS CSCD 北大核心 2017年第11期2077-2081,共5页 Chemical Journal of Chinese Universities
基金 中国石油天然气股份有限公司科学研究与技术开发项目(批准号:2014A-1001)资助~~
关键词 超低折射率 溶胶-凝胶法 疏水性 羟丙基-Β-环糊精 Ultralow refractive index Sol-gel method Hydrophobic Hydroxypropyl-β-cyclodextrin
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  • 7Unal B, Parbukov A N, Bayliss S C. [J]. Optical Materials, 2001, 17: 79-82.
  • 8Canham L T, Cox T I, Loni A, et al. [J]. Applied Surface Science, 1996, 102: 436-441.
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  • 10Kronast W, Müller B, Siedel W, et al. [J]. Sensors and Actuators, 2001, A87(3): 188-193.

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