聚二甲基硅氧烷裂解法碳化硅纳米线的制备及表征

Preparation and Characterization of Silicon Carbide Nanowires by Polydimethylsiloxane Pyrolysis

以聚二甲基硅氧烷和金属硅粉为反应原料,在专用管式炉中成功实现了碳化硅纳米线的生长制备。利用X射线衍射仪、扫描电子显微镜、傅里叶变换红外光谱仪和透射电子显微镜对制备的产物进行性能表征,并对影响碳化硅纳米线生长的因素进行探究讨论。研究结果显示:所获得的浅绿色纤维产物为闪锌矿结构单晶碳化硅纳米线,纳米线直径约30nm,长度可达几厘米。在此反应体系中,聚二甲基硅氧烷注射速率和高温保温时间对纳米线的生长有着重要作用,在聚二甲基硅氧烷注射速率为0.4~0.5mL/min,高温保温时间为2.0h的条件下,能成功实现优质碳化硅纳米线的制备。

The fabrication of silicon carbide nanowires was researched by using polydimethylsiloxane and silicon powder as the raw materials in the special tube furnace.X-ray diffractometer（XRD）,scanning electron microscope（SEM）,Fourier-transform infrared spectrometer（FT-IR）and transmission electron microscopy（TEM）were used to characterize the product,and the factors influencing silicon carbide nanowire growth were investigated.The results reveal that the light green diver product is single crystal3 C-SiC nanowires with zinc blende structure;the diameter is about 30 nm,and the length can reach few centimeters.In this reaction system,the injection rate of polydimethylsiloxane and the holding time at high temperature play a vital role in the growth of nanowires.SiC nanowires could be synthesized well when the injection rate is 0.4~0.5 mL/min and the holding time at high temperature is 2.0 h.