多热源合成碳化硅温度场及压力场变化规律研究

Change Law of Temperature and Pressure Field Synthesis Silicon Carbide by Multi-heat-source

过数值模拟及工业实验的方法分别对多热源和单热源合成炉内的温度场及压力场进行分析,研究了两种合成炉内温度及压力的演变规律。结果表明由于多热源的能量叠加效应,使得适合于碳化硅合成的温度区域明显高于单热源,且分散的热源避免了能量过于集中从而减少碳化硅的分解量,同时从两种合成炉压力分布图可以看出,单热源炉内压力最高为1.525×101 kPa极易发生喷炉事故,而多热源最高压力为1.256×101 kPa,此压力相比而言能保证合成过程的平稳进行。

With numerical simulation and industry experiments of temperature and pressure field in multi and single heat source,the temperature and pressure field was analyzed. The results show that due to superposition effect of temperature field in multi heat source furnace will increase suitable for silicon carbide synthesis area,and dispersed heat source can avoid decomposition of silicon carbide. At the same time,seen from the two synthesis furnace pressure distribution,the most pressure is 1. 525 × 101 kPa in single heat source,it will tend cause spouting of furnace,and the maximum pressure of multi heat source is 1. 256 × 101 kPa the pressure can ensure smooth synthesis process.