摘要
The paper reports the fabrication and characterization of a novel Au/PVP/ZnO/Si/Al semiconductor heterojunction（HJ） diode. Both inorganic n type ZnO and organic polyvinyl pyrrolidone（PVP） layers have grown by sol-gel spin-coating route at 2000 rpm. The front and back metallic contacts are thermally evaporated in a vacuum at pressure of 10^-6 Torr having a diameter of 1.5 mm and a thickness of 250 nm. The detailed analysis of the forward and reverse bias current-voltage characteristics has been provided. Consequently, many electronic parameters, such as ideality factor, rectification coefficient, carrier concentration, series resistance, are then extracted.Based upon our results a non-ideal diode behavior is revealed and ideality factor exceeds the unity（n 〉 4）. A high rectifying（-4.6 × 10^4） device is demonstrated. According to Cheung-Cheung and Norde calculation models, the barrier height and series resitance are respectively of 0.57 eV and 30 kΩ. Ohmic and space charge limited current（SCLC） conduction mechanisms are demonstrated. Such devices will find applications as solar cell, photodiode and photoconductor.
The paper reports the fabrication and characterization of a novel Au/PVP/ZnO/Si/Al semiconductor heterojunction（HJ） diode. Both inorganic n type ZnO and organic polyvinyl pyrrolidone（PVP） layers have grown by sol-gel spin-coating route at 2000 rpm. The front and back metallic contacts are thermally evaporated in a vacuum at pressure of 10^-6 Torr having a diameter of 1.5 mm and a thickness of 250 nm. The detailed analysis of the forward and reverse bias current-voltage characteristics has been provided. Consequently, many electronic parameters, such as ideality factor, rectification coefficient, carrier concentration, series resistance, are then extracted.Based upon our results a non-ideal diode behavior is revealed and ideality factor exceeds the unity（n 〉 4）. A high rectifying（-4.6 × 10^4） device is demonstrated. According to Cheung-Cheung and Norde calculation models, the barrier height and series resitance are respectively of 0.57 eV and 30 kΩ. Ohmic and space charge limited current（SCLC） conduction mechanisms are demonstrated. Such devices will find applications as solar cell, photodiode and photoconductor.
基金
supported by the Algerian Ministry of High Education and Scientific Research through the CNEPRU project No.B00L02UN310220130011,www.mesrs.dz,and www.univ-usto.dz
included in ANVREDET PROJECT N° 18/DG/2016 “projet innovant:synthèse et caractérisation de films semiconducteurs nanostructurés et fabrication de cellule solaire” 2016,http://www.anvredet.org.dz
