摘要
针对微带阵列天线副瓣电平难抑制的问题,通过在天线接地板上加载H型超材料的方法,设计了一款低副瓣微带阵列天线。利用HFSS对阵列天线进行仿真设计,将H型结构的超材料刻蚀在阵列天线的金属接地板上,比较天线在加载H型超材料前后的副瓣电平,并对设计完成的天线进行加工制作。仿真和测试结果表明,在15.25 GHz、15.35GHz和15.45 GHz这3个频点处,加载了H型超材料的天线与原天线相比,副瓣电平分别下降了2.7 d B、3.4 d B和2.9 d B。
A new method for obtaining low sidelobes pattern in a planar microwave array antenna is proposed.The method involves the addition of H-shaped metamaterial etched on the metal ground plate of the array antenna and a low sidelobe microstrip array antenna is designed by this method. The sidelobe level of the antenna is simulated and analyzed before and after the H-shaped metamaterial is loaded by 3 D electromagnetism simulation software HFSS. Simulation and test results show that the antenna loading H-shaped metamaterial has lower sidelobe level of 2.7 d B,3. 4 d B and 2. 9 d B at 15. 25 GHz,15. 35 GHz and 15. 45 GHz,respectively,compared with the original antenna.
出处
《电子科技》
2017年第11期1-3,8,共4页
Electronic Science and Technology
基金
国家自然科学基金(60673143)
浙江省科技计划基金(2006C21020)
关键词
微带阵列天线
H型超材料
回波损耗
低副瓣
microstrip array antenna
H- shaped metamaterial
return loss
low sidelobe level
