基于六角氮化硼二维薄膜的忆阻器

Two-dimensional hexagonal boron nitride based memristor

报道了一种基于多层六角氮化硼(h-BN)二维薄膜的忆阻器件.该器件不需要电预处理过程,且具有自限流的双极性阻变行为;具有较好的抗疲劳性和较长的数据保持时间.该器件在脉冲编程条件下具有模拟转变特性,即在连续的电压脉冲下器件的电阻态能被连续地调控,使得该器件能够模仿神经网络系统中的神经突触权重变化行为.综上所述,基于多层h-BN的忆阻器具有应用在非易失性存储和神经计算中的潜力.

Hexagonal boron nitride（h-BN） based resistive switching device is fabricated with the multilayer h-BN film serving as an active material. The device shows the coexistence of forming-free and self-compliance bipolar resistive switching behavior with reproducible switching endurance and long retention time. Moreover, the device in pulse mode shows analog resistive switching characteristics, i.e. the resistance states can be continuously tuned by successive voltage pulses. This suggests that the device is also capable of mimicking the synaptic weight changes in neuromorphic systems.