高In组分InGaNAs/GaAs量子阱的生长及发光特性

Growth and Photoluminescence Characteristics of In Ga NAs/Ga As QW with High In Composition

采用分子束外延技术(MBE)在Ga As衬底上外延生长高In组分(>40%)In Ga NAs/Ga As量子阱材料,工作波长覆盖1.3~1.55μm光纤通信波段。利用室温光致发光(PL)光谱研究了N原子并入的生长机制和In Ga NAs/Ga As量子阱的生长特性。结果表明:N组分增加会引入大量非辐射复合中心;随着生长温度从480℃升高到580℃,N摩尔分数从2%迅速下降到0.2%;N并入组分几乎不受In组分和As压的影响,黏附系数接近1;生长温度在410℃、Ⅴ/Ⅲ束流比在25左右时,In_(0.4)Ga_(0.6)N_(0.01)As_(0.99)/Ga As量子阱PL发光强度最大,缺陷和位错最少;高生长速率可以获得较短的表面迁移长度和较好的晶体质量。

In Ga NAs/GaAs quantum-well（ QW） with high In composition（ 40%） which covered the optical fiber communication wavelength range of 1. 3-1. 55 μm was grown on GaAs substrate by molecular beam epitaxy（ MBE）. The characteristics of N atom incorporation and growth properties for In Ga NAs/GaAs QW were studied by photo luminescence（ PL） spectra at room temperature. The results show that the increasing of N composition can result in a large number of non-radiative recombination centers. The mole fraction of N decreases sharply from 2% to 0. 2% with the growth temperature increasing from 480 ℃ to 580 ℃. The change of In composition and As pressure cannot influence the incorporation of N atoms and the adhesion coefficient of N is about 1. The PL intensity at1. 3 μm for In Ga NAs/GaAs QW is strongest at the growth temperature of 410 ℃ and Ⅴ/Ⅲ ratio of- 25. Higher growth rate can obtain shorter surface migration length and improve the crystal quality.