衬底温度对ITO薄膜及黑硅SIS型太阳电池性能影响

Effect of Substrate Temperature on the Properties of ITO Film and Black Silicon SIS Solar Cells

结合反应离子刻蚀法和掩膜法在n型硅片表面制备出圆锥状结构黑硅,利用湿法氧化法在硅片表面氧化出一层超薄SiOx,采用磁控溅射法在其表面沉积一层掺锡氧化铟(IndiumTinOxide,ITO)薄膜,在黑硅衬底上制备出ITO/SiOx/n-Si太阳电池。通过硅片表面纳米结构,增加光吸收,进而提高电池转化效率。研究结果表明,在不同衬底温度下沉积ITO时,薄膜都呈现出了良好的光学和电学性能.250℃时,ITO薄膜性能最优,在400~1 000nm波长范围内,平均透过率达到93.1%,并展现出优异的电学性能.通过优化H_2O_2预处理时间,减小了SiOx层中氧空位缺陷,SIS电池短路电流得到明显提高,从未处理前的26.84mA/cm2提升到经H_2O_2处理15min后的34.31mA/cm2.此时,电池性能最优,转化效率达到3.61%.

The cone nanostructures on n-silicon were fabricated by combination mask with reactive ion etching. After forming ultra-thin SiO2 on black silicon by wet oxidation method, the Indium Tin Oxide （ITO） film was deposited by magnetron sputtering equipment. Finally, the ITO/SiOx/n-Si solar cell was fabricated. The photoelectric conversion efficiency of cells improved because of nanostructures, which can increase the absorption of light. Results showed that ITO deposited at different temperatures and presented the good optical and electrical properties. The ITO film grown at 250℃ exhibited the excellent optical and electrical properties. In 400-1 000 nm wavelength, the average transmittance of ITO up to 93.1%. By optimizing the H2O2 pretreatment time, the short circuit current of SIS solar cell increased from 26.84 mA/cm^2 to 34.31 mA/cm^2 due to the oxygen vacancy defects decrease in SiOx layers. When using H2O2 pretreated black silicon for 15 rain and deposited ITO at 150℃, the SIS solar cell conversion efficiency reached 3.61%.