PECVD技术在微结构表面沉积薄膜的复形性

Reproducibility of Thin Films Deposited on Microstructure Surface by PECVD Technology

采用光刻技术、刻蚀技术和等离子体增强化学气相沉积(PECVD)技术,在线阵掩模微结构表面沉积了SiO2和Si3N4薄膜,研究了线阵掩模的宽度和厚度,以及薄膜的厚度和沉积速率对SiO2和Si3N4薄膜复形性的影响,制备得到了具有良好微结构形貌的微结构滤光片阵列。结果表明,薄膜沉积速率越大,薄膜的复形性越好;掩模厚度和薄膜沉积厚度的增加会导致薄膜的复形性变差;SiO2薄膜的复形性优于Si3N4薄膜的。

The thin films of SiO2 and Si3 N4 are deposited on the microstructure surface of a linear array mask by the techniques of photolithography, etching and plasma enhanced chemical vapor deposition （PECVD）. The influences of the width and thickness of the linear array mask, as well as the film thickness and deposition rate on the reproducibility of SiO2 and Si3 N4 films are investigated. A microstructure fiher array with a good microstructure is prepared. The results show that the larger the film deposition rate is, the better the film reproducibility is. The increases of mask thickness and film deposition thickness lead to the deterioration of thin film reproducibility. The reproducibility of SiO2 films is better than that of Si3 N4 films.