摘要
通过加速时效方法研究Au20Sn/Au微焊点钎焊工艺参数与镀Au层的消耗和Au20Sn/Au界面化合物(IMC)生长速率的关系。结果表明:焊点在150℃时效条件下,钎焊温度一定时,高温液态停留时间由30 s增至90 s,镀Au层消耗速率变化速度和界面IMC层生长速率变化速度均逐渐增加。在高温液态停留时间90 s时,相比于钎焊温度300℃的焊点,320℃时镀Au层消耗速率变化速度降低了24.50%,界面IMC层生长速率的变化速度提高了56.09%。同时随时效时间的延长,热沉侧出现一层(Ni,Au)3Sn2相,但芯片侧和热沉侧界面IMC的类型并没有发生变化。
The relationship between soldering parameters and the consumption rate of Au layer as well as the intermetallic compound （IMC） growth rate of Au20Sn/Au micro solder joints was investigated by accelerated aging method. The results indicate that the change speeds of the consumption rate of Au layer and the growth rate of IMC layer increase with the increment of high temperature liquid holding time from 30 s to 90 s at the same soldering temperature after 150 ℃ aging temperature. When the liquid holding time at 320 ℃ increases to 90 s, the change speeds of the consumption rate of Au layer and the growth rate of IMC layer reduce by 24.50% and 56.09%, respectively, when compared to the samples holding at 300 ℃. The （Ni, Au） 3Sn2 IMC layer is formed at Au20Sn/Au/Ni layer interface with the increase of aging time, but there is no change in the type of interface between the chip side and the Cu side.
出处
《电子元件与材料》
CAS
CSCD
2017年第12期36-41,共6页
Electronic Components And Materials
基金
国家高技术研究发展计划资助项目(No.2015AA033304)
