摘要
主要研究了硒化钼(MoSe2)薄膜的制备及其光电特性。以硒化钼粉末作为原料、采用化学气相沉积(CVD)法在Si衬底上沉积硒化钼薄膜。利用原子力显微镜(AFM)、X射线衍射仪(XRD)、霍尔效应仪和UV-3600分光光度计分别表征了硒化钼薄膜的表面形貌﹑晶体结构﹑光吸收特性和MoSe2/Si异质结的光电特性。分析可见所制备的硒化钼薄膜由柱状生长的硒化钼纳米颗粒构成,且这些纳米颗粒具有很强的垂直生长的取向。另外,还发现该硒化钼薄膜对可见光有很强的吸收和良好的光电特性,表明硒化钼薄膜在光电器件领域具有很大的应用潜力。
The preparation and the optoelectronic characteristics of molybdenum selenide （MoSe2） thin films were mainly studied. With MoSe2 powder as the raw material, the MoSe2 thin films were deposited on the Si substrate by the chemical vapor deposition （CVD） method. The surface morphology, crystal structure, optical absorption of MoSe2 thin films and optoelectronic properties of MoSe2/Si heterojunction were characterized by atomic force microscope （AFM）, X- ray diffractometer （XRD）, Hall effect instrument and UV-3600 spectrophotometer. It is found that the prepared MoSe2 thin films are composed of columnar MoSe2 nanoparticles with a strong orientation of vertical growth. Additionally, the MoSe2 thin films have strong visible light ab- sorption and good optoelectronic characteristics, indicating that the MoSe2 thin films have great potential applications in the field of optoelectronic devices.
出处
《微纳电子技术》
北大核心
2017年第12期813-816,834,共5页
Micronanoelectronic Technology
基金
国家自然科学基金资助项目(31570515)
苏州市科技计划项目(SYN201511)
关键词
硒化钼(MoSe2)
化学气相沉积(CVD)
表面形貌
光吸收
光电特性
molybdenum selenide （MoSe2）
chemical vapor deposition （CVD）
surface mor- phology
optical absorption
optoelectronic characteristic
