绝缘层上锗(GOI)材料的表征测试

Characterization and Measurement of Germanium-on-Insulator(GOI) Materials

晶片键合技术已成为半导体器件制备中的一项重要工艺,目前广泛地应用于SOI(Silicon-on-insulator)、GOI(Germanium-oninsulator)结构以及硅基Ш-V族结构的制备,在硅基光电集成方面具有广阔的应用前景。本文采用键合技术结合智能剥离方法制备了绝缘层上锗(GOI)材料,并通过原子力显微镜(AFM)、扫描声学显微镜(SAM)、透射电镜(TEM)、以及X射线衍射(XRD)等对GOI的微结构进行了表征和分析。非破坏性的检测方法在键合质量检测上具有重要的应用价值,键合材料表征技术的进步,必将推动键合技术不断向前发展。

Wafer bonding has been demonstrated to be an important technology in the semiconductor device fabrication, which promoted the development of silicon-on-insulator（SOI） wafers, germanium-on-insulator（GOI） wafers and Ш-V structures on Si substrate. This remarkable process can be widely used for the monolithic integration of Si based opto-electronics. In this study, GOI materials were fabricated by Smart-Cut and wafer bonding techniques. Atomic force microscope（AFM）, scanning acoustic microscope（SAM）, transmission electron microscopy（TEM） and X-ray diffraction（XRD） have been used to characterize microstructure of GOI materials. These non-destructive measurements are important on the application of bonding quality characterization. The improvement of the characterization methods will promote the development of wafer bonding technology.