光浴对CH_3NH_3PbI_3薄膜光致发光量子效率的影响

Effect of Light Soaking on Photoluminescence Quantum Efficiency of CH_3NH_3PbI_3 Films

研究了CH_3NH_3PbI_3薄膜在光浴条件下的光致发光量子效率演化行为。在光浴过程中,CH_3NH_3PbI_3薄膜的光致发光量子效率表现为先增大再减小的变化趋势。发光动力学测量实验表明,在光浴过程中,CH_3NH_3PbI_3薄膜的载流子复合寿命与光致发光量子效率具有相同的变化趋势,即先增大再减小。根据实验结果可以推断,光浴引发CH_3NH_3PbI_3薄膜发生两种物理过程,分别使其光致发光量子效率升高和降低。两种过程共同决定了CH_3NH_3PbI_3薄膜在光浴条件下的光致发光量子效率演化行为。

The photoluminescence quantum efficiency evolution of CH3NH3PbI3 films was studied in this paper. During the light soaking the photoluminescence quantum efficiency of CH3NH3PbI3 films increases first,then decreases gradually. The photoluminescence dynamics measurement shows that the carrier recombination lifetime changes synchronously with that of photoluminescence quantum efficiency. According to the above experimental phenomena,we propose that the light soaking induces two processes of opposite direction to CH3NH3PbI3 films. One process would increase the photoluminescence quantum efficiency of CH3NH3PbI3 film,and the other one would reduce its photoluminescence quantum efficiency. Both processes determine the evolution of photoluminescence quantum efficiency of CH3NH3PbI3 films together.