摘要
针对双Buck半桥逆变器,分别分析了采用传统Si开关器件和新型宽禁带Si C开关器件情况下的损耗,并制作了1台1 k W试验样机。理论分析与试验结果表明,通过独立二极管续流的双Buck型逆变器能充分发挥宽禁带Si C开关器件优势,开关损耗明显降低;随着开关频率提高,Si C开关器件损耗增加不明显,说明Si C开关器件组成的双Buck型逆变器中随开关频率变化的损耗以磁性元件损耗变化为主。
The loss of traditional Si switching devices and the novel wide bandgap Si C switching devices in dual buck half bridge inverter was analyzed,respectively,and a 1 k W experimenal prototype was built. The theoretical analysis and experimental results show that the dual buck inverter with independent freewheeling diode can make full advantages of wide bandgap Si C devices,and the switching loss is obviously reduced. In addition,the loss of switching devices is not obvious with the increase of switching frequency,which means the main loss of the dual buck inverter with the enhancing of switching frequency is the loss in the magnetic components.
出处
《电器与能效管理技术》
2017年第22期44-49,共6页
Electrical & Energy Management Technology
基金
福建省自然科学基金(2016105154)
福建省教育厅科技项目(JAT160067)