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One-dimensional method of investigating the localized states in armchair graphene-like nanoribbons with defects

One-dimensional method of investigating the localized states in armchair graphene-like nanoribbons with defects
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摘要 In this paper we propose a type of new analytical method to investigate the localized states in the armchair graphene-like nanoribbons. The method is based on the tight-binding model and with a standing wave assumption. The system of armchair graphene-like nanoribbons includes the armchair supercells with arbitrary elongation-type line defects and the semi-infinite nanoribbons. With this method, we analyze many interesting localized states near the line defects in the graphene and boron-nitride nanoribbons. We also derive the analytical expressions and the criteria for the localized states in the semi-infinite nanoribbons. In this paper we propose a type of new analytical method to investigate the localized states in the armchair graphene-like nanoribbons. The method is based on the tight-binding model and with a standing wave assumption. The system of armchair graphene-like nanoribbons includes the armchair supercells with arbitrary elongation-type line defects and the semi-infinite nanoribbons. With this method, we analyze many interesting localized states near the line defects in the graphene and boron-nitride nanoribbons. We also derive the analytical expressions and the criteria for the localized states in the semi-infinite nanoribbons.
机构地区 College of Physics
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第12期516-525,共10页 中国物理B(英文版)
基金 Project supported by the Starting Foundation for the‘Hundred Talent Program’of Chongqing University,China(Grants No.0233001104429)
关键词 graphene nanoribbons tight-binding model energy band localized states graphene nanoribbons tight-binding model energy band localized states
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