基于镀铜SiC-Cu颗粒制备石墨烯片/SiC-Cu和碳纳米管/SiC-Cu增强体

Preparation of graphene nano sheets/SiC-Cu and carbon nano-tubes/SiC-Cu reinforcements based on Cu plating SiC-Cu particles

利用化学气相沉积法(CVD),分别在光沉积镀铜SiC-Cu颗粒和无电镀铜SiC-Cu颗粒表面制备石墨烯片(GNSs)/SiC-Cu和碳纳米管(CNTs)/SiC-Cu增强体。利用拉曼光谱和SEM研究制备温度和保温时间对生成的石墨烯片和碳纳米管的层数和质量的影响。结果表明:利用CVD法,在无电镀铜SiC-Cu颗粒和光沉积镀铜SiCCu颗粒表面均可生成多层GNSs和CNTs;以无电镀铜SiC-Cu颗粒为基体,在1 000℃下保持20 min生成的GNSs质量较好,已经接近单层;利用SEM观察最佳参数下的生成物,可观察到10~45nm直径的CNTs交错分布在圆形铜颗粒之间。

Graphene nanosheets（GNSs）/SiC-Cu and carbon nano-tubes（CNTs）/SiC-Cu reinforcements were pre-pared on the surface of electroless Cu （ECu）plating and photodeposition Cu （PCu）plating SiC-Cu particles respec-tively by chemical vapor deposition （CVD）.The effects of temperature and holding time during the preparation on the layers and the quality of GNSs and CNTs were studied by Raman spectroscopy and SEM.The results show that multilayer GNSs and CNTs are successfully prepared on both the surface of ECu plating and PCu plating SiC-Cu par-ticles by CVD.The GNSs prepared at 1000℃ for 20 min on ECu plating SiC-Cu particles are successfully obtained with good quality and less layer （almost monolayer）.The CNTs in the state of interlaced distribution are found be-tween the copper atoms by SEM,whose diameter ranges 1045 nm.