快响应门控光电倍增管设计

High-Speed Response Gated Photomultiplier Design

门响应时间和消光比是门控光电倍增管的两个重要性能参数。介绍了将俄制CHφT5型光电倍增管改制为门控光电倍增管的设计。采用控制光电倍增管第二聚焦极的方法,设计快响应门控制电路,使门控光电倍增管具有3个量级以上的消光比,开门延迟响应时间为70 ns,光电倍增管恢复输出的时间为20 ns。光电倍增管灵敏度降低了20%。

Gating response time and cut - off ratio are two important performance parameters of gated photomultiplier. The design of gating a CHφT5 type photomultiplier, made in Russian, was discussed in this paper. The method of controlling the second focus electrode was adopted. With a high quality and fast response gating circuit, the cut - off ratio of gated photomuhiplier is larger than 103. After turning on the gated photomultiplier, the delay time and the rise time of photomultiplier＇s anode output are 70 ns and 20 ns respectively. The sensitivity of photomultiplier is decreased 20%.