期刊文献+

Subsurface Damage of Monocrystalline Germanium Wafers by Fixed and Free Abrasive Lappings

Subsurface Damage of Monocrystalline Germanium Wafers by Fixed and Free Abrasive Lappings
下载PDF
导出
摘要 The subsurface damage(SSD)layers of monocrystalline germanium wafers lapped by three different ways were measured and compared by the method of nanoindentation and micro morphology.Three ways such as ice-fixed abrasive,thermosetting fixed abrasive and free abrasive lappings are adopted to lap monocrystalline germanium wafers.The SSD depth was measured by a nanoindenter,and the morphology of SSD layer was observed by an atomic force microscopy(AFM).The results show that the SSD layer of monocrystalline germanium wafer is mainly composed of soft corrosion layer and plastic scratch and crack growth layer.Compared with thermosetting fixed abrasive and free abrasive lappings,the SSD depth lapped with ice-fixed abrasive is shallower.Moreover,the SSD morphology of monocrystalline germanium wafer lapped with ice-fixed abrasive is superior to those of two other processing ways. The subsurface damage (SSD) layers of monocrystalline germanium wafers lapped by three different ways were measured and compared by the method of nanoindentation and micro morphology. Three ways such as ice-fixed abrasive, thermosetting fixed abrasive and free abrasive lappings are adopted to lap monocrystalline ger manium wafers. The SSD depth was measured by a nanoindenter, and the morphology of SSD layer was observed by an atomic force microscopy(AFM). The results show that the SSD layer of monocrystalline germanium wafer is mainly composed of soft corrosion layer and plastic scratch and crack growth layer. Compared with thermosetting fixed abrasive and free abrasive lappings, the SSD depth lapped with ice fixed abrasive is shallower. Moreover, the SSD morphology of monocrystalline germanium wafer lapped with ice fixed abrasive is superior to those of two oth- er processing ways.
出处 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI CSCD 2017年第5期496-503,共8页 南京航空航天大学学报(英文版)
基金 supported by the National Natural Science Foundation of China(No.51375237) the Postdoctoral Science Foundation of China(No.2015T80547)
关键词 subsurface damage(SSD) NANOINDENTATION fixed abrasive lapping monocrystalline germanium wafer subsurface damage(SSD) nanoindentation fixed abrasive lapping monocrystalline germanium wafer
  • 相关文献

参考文献3

二级参考文献18

  • 1ZHU L Q, KAO I. Galerkin-based modal analysis on the vibration of wire-slurry system in wafer slicing using a wire saw [J]. J Sound Vib, 2005, 283: 589-620.
  • 2PEI Z J, BILLINGSLEY S R. Grinding induced subsurface cracks in silicon wafers [J]. Int J Mach Tools Manuf, 1999, 39(7): 1103-1116.
  • 3ZHANG J M, PEI Z J, SUN J G. Measurement of subsurface damage in silicon wafers [C]//6th International Conference on Progress of Machining Technology, Xi'an, China, 2002: 715-720.
  • 4JOHNSON B C, MCCALLUM J C. Ion-channeling and Raman scattering study of damage accumulation in silicon [J]. J Appl Phys, 2004, 95(3): 1096.
  • 5Tonshoff H.K.,Schmieden W.V.,and Inasaki I.,Abrasive machining of silicon,Ann.CIRP,1990,39(2):621.
  • 6Lucca D.A.,Brinksmeier E.,and Goch G.,Progress in assessing surface and subsurface integrity,Ann.CIRP,1998,47 (2):669.
  • 7Pei Z.J.and Strasbaugh A.,Fine grinding of silicon wafers:designed experiment,Int.J.Mach.Tools Manuf.,2002,42:395.
  • 8Bradly J.E.,Williams J.S.,and Wong-Leung J.,Mechanical deformation in silicon by micro-indentation,J.Mater.Res.,2001,16 (5):1500.
  • 9Kunz R.R.,Clark H.R.,Nitishin P.M.,and Rothschild M.,High resolution studies of crystalline damage induced by lapping and single-point diamond machining of Si (100),J.Mater.Res.,1996,11 (5):1228.
  • 10Puttick K.H.,Whitmore L.C.,Chao C.L.,and Gee A.E.,Transmission electron microscopy of nanomachined silicon crystal,Phil.Mag A.,1994,69:91.

共引文献10

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部