铜镍诱导非晶硅晶化机制研究

The mechanisms of copper and nickel induced crystallization of amorphous silicon

对可形成硅化物的金属铜、镍诱导非晶硅晶化机制进行了研究。利用等离子体增强化学气相沉积(PECVD)和磁控溅射制备了Cu/a-Si、Ni/a-Si双层薄膜系列样品,并对制备的样品进行了退火处理,然后利用X射线衍射仪和拉曼光谱仪对样品进行了表征。结果表明,对2个双层膜体系退火,首先生成金属硅化物,然后当温度升高到一定值时才会发生非晶硅晶化。利用界面热力学解释了铜、镍诱导非晶硅晶化的机制,以及金属硅化物在诱导过程中的作用。

The mechanisms of copper（Cu）or nickel（Ni）induced crystallization of amorphous silicon are studied by X-ray diffractometer（XRD）and Raman spectrometer upon annealing Cu/a-Si and Ni/a-Si bi-layered samples.The samples are prepared by plasma enhanced chemical vapor deposition（PECVD）and magnetron sputtering.The experimental results show that,upon annealing,metal silicide is formed and followed by the crystallization of amorphous silicon when the temperature increases to a certain value.The mechanisms of Cu and Ni induced crystallization of amorphous silicon and the role of metal silicide are studied by the interfacial thermodynamics.