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应力效应对La_(0.8)Ba_(0.2)MnO_3薄膜电磁学特性的影响 被引量:2

Strain-induced modulation of electrical and magnetic properties in La_(0.8)Ba_(0.2)MnO_3 thin films
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摘要 以相同的生长条件,在(LaAlO_3)_(0.3)(Sr_2AlTaO_6)_(0.7)(LSAT)衬底上制备不同厚度的La_(0.8)Ba_(0.2)MnO_3(LBMO)薄膜。由于薄膜厚度与薄膜应变之间的正相关关系,LBMO薄膜的厚度一定程度上决定了其磁学特性。LBMO薄膜与LSAT衬底的晶格失配导致LBMO在面内受到压应力,在垂直面内受到拉应力,拉应力趋向于使面内晶格常数增大,而压应力起到相反的作用,会使纵向晶格常数变小。因此,随着薄膜厚度的减小,压应力增加,从而引起薄膜的纵向晶格常数变小。LBMO的晶格畸变必然导致其能带结构的变化,从而在宏观上诱发磁电阻效应的改变。 Under the same deposition conditions,La(0.8)Ba(0.2)MnO3(LBMO) thin films with different thickness were grown on the(LaAlO3)(0.3)(Sr2AlTaO6)(0.7)(LSAT) substrates. Due to the proportional relationship between thickness and strain of LBMO films, the thickness of LBMO thin film determines their magnetic properties. The lattice mis-matching between LBMO film and LSAT substrate causes the in-plane compressive strain accompanied by the out-of-plane tensile strain. In-plane compressive strain tends to decrease the lattice constants along a-axis and b-axis, while out-of-plane tensile strain may increase the lattice constants along c-axis. Therefore, with the films thinning the increasing strain effect induces the distortion of the films' lattice structure. This may change the band structure inevitably, thereby inducing the modulation of electrical and magnetic properties in LBMO films.
出处 《苏州科技大学学报(自然科学版)》 CAS 2017年第4期25-30,共6页 Journal of Suzhou University of Science and Technology(Natural Science Edition)
基金 国家自然科学基金资助项目(11504254 11304089 11374225 11574227) 国家重点基础研究发展计划项目(973计划)(2014CB921002)
关键词 La0.8Ba0.2MnO3薄膜 应力效应 电磁学特性 La0.8Ba0.2MnO3 thin film strain effect electrical and magnetic properties
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  • 1刘宁,徐素军,郭焕银,童伟,张裕恒.A位的Sm掺杂对La_(0.67)Sr_(0.33)MnO_3体系磁电性质的影响[J].物理学报,2005,54(2):912-919. 被引量:20
  • 2许振嘉.近代半导体材料的表面科学基础[M].北京:北京大学出版社,2004.
  • 3Wang J, Neaton J B, Zheng H, et al. Epitaxial BiFeOa multiferroic thin film heterostructures. Science, 2003, 299: 1719-1722.
  • 4Eerenstein W, Mathur N D, Scott J F. Multi- ferroicand magnetoelectric materials. Nature, 2006, 442: 759-765.
  • 5Catalan G, Scott J F. Physics and applications of Bismuth ferrite. Advanced Materials, 2009, 21(24), 2463-2485.
  • 6Liu H J, Yang P, Yao K, etal. Twinning ro- tation and ferroelectric behavior of epitaxial BiFeO3 (001) thin film. Applied Physics Let- ters, 2010, 96: 012901-1-012901-3.
  • 7Wu J G, Wang J. ZnO as a buffer layer for growth of BiFeO3 thin films. Journal of Applied Physics, 2010, 108.. 034102-1:034102-8.
  • 8Son J Y, Shin Y H, Ryu S W, etal. Multifer- roic properties of highly c-oriented BiFeO3 thin films on glass substrates. Electrochemical and Solid-State Letters, 2010, 13(1): G5-G7.
  • 9Fischer P, Sosnowska I. Temperature depend- ence of crystal and magnetic structure of BiFeOa. Journal of Physics C, 1980, 13:1931-1940.
  • 10Fruth V, Mitoseriu L, Berger D, et al. Prepa- ration and characterization of BiFeO3 ceramic. Progress in Solid State Chemistry, 2007, 35(2-4):193-202.

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