原子层沉积制备TiN薄膜对三维MIM电容器的影响

Effect of TiN Films Fabricated by Atomic Layer Deposition Technology on MIM Capacitors with Three Dimensional Structures

基于原子层沉积技术和高深宽比硅微基础结构,分别选用W、TiN和Al_2O_3作为电极层、缓冲层和介质层,实现了两种三维MIM电容器.采用SEM、XRD、XPS和电学测试仪等分析手段,重点研究原子层沉积技术所制备的TiN薄膜特性及其对MIM电容器的影响.结果表明:无定型TiN薄膜具有良好的化学计量比和导电特性,其应力缓冲作用增加了电容器金属与介质层间的粘附性,且提高电容器容值达8.3%.

Two types of 3D MIM capacitors based on silicon microstructures with high aspect ratio are prepared by atomic layer deposition technology for W,Ti and Al_2O_3 acted as electrodes,buffering layers and insulators,respectively.The properties of TiN thin films and the effect on MIM capacitors are investigated using Scan Electronic Microscope,X-ray Photoelectron Spectroscopy,X-Ray Diffraction and electrical measuring instruments,respectively.The results indicate that amorphous TiN films have good stoichiometric ratio and conductivity characteristics and play the role of stress buffering between metal and dielectric,resulting in excellent adhesion and the increase of capacitance value in 8.3%.