一种AlGaN/GaN HEMT非线性器件模型参数提取的方法

A Method for AlGaN/GaN HEMT Nonlinear Device Model Parameter Extraction

该文提出一种新的绝对误差函数,应用该函数进行非线性模型参数提取可以避免计算误差,显著降低参数提取的不准确性。由于氮化物半导体器件,尤其是AlGaN/GaNHEMT器件已经开始得到广泛应用,其模型和参数对射频和电力电子器件和电路设计至关重要,分别使用3种误差函数对AlGaN/GaNHEMT器件模型进行了参数提取并对比,对比结果表明该文提出的误差函数更加精确和有效。同时为今后的电子器件的模型参数提取提供了一种有效且精确的方法。

A new absolute error function is presented in this paper. The function is applied to extract parameters of the nonlinear model, which can avoid the calculation error and reduce the inaccurate parameter extraction significantly. Nitride semiconductor devices are widely used, especially the AlGaN/GaN HEMT devices. The AlGaN/GaN HEMT model and parameters is very important to radio frequency, power electronic devices and circuit design. The new absolute error function is applied to extract the parameters of AlGaN/GaN HEMT nonlinear devices model. Through comparing three kinds of error function, the results show that the proposed error function is more accurate and effective. At the same time, a precise and effective method is provided to extract the parameters of electronic devices in the future.