PZT铁电薄膜的低温制备及其微图形加工

Low temperature fabrication of PZT ferroelectric film and its micro-patterning

锆钛酸铅(PZT)铁电薄膜具有高的剩余极化强度和机电耦合系数,是制备各种传感器和存贮器优良的功能材料。在器件的制备工艺中,需要将PZT铁电膜沉积到单晶Si基板上,但是,PZT过高的结晶温度会严重地破坏Si基板。为了降低PZT的结晶温度,使用紫外光辅助热处理技术对PZT前驱体薄膜进行预处理,可以将PZT的结晶温度降低至475℃,从而实现PZT薄膜的低温制备。在紫外光的预处理过程中,通过光源与PZT膜中的有机基团发生光化学作用,从而形成不溶于溶剂的活性单体,通过溶剂的清洗,可以实现对前驱体膜的微加工,形成PZT阵列,为制备高密度存贮器所需要的逻辑阵列提供了有意义的探索。

PZT ferroelectric films possess high remanent polarization,high electeromechanical coupling coefficient,can be as a potential material for sensors and storage devices.During the fabrication of these devices,PZT films need to deposit on the single crystal Si substrate.However,the high crystallizing temperature of PZT would damage Si substrate.Therefore,the crystallizing temperature of PZT films can be decreased at 475℃ by using UV irradiation during the pre-treated process.During UV irradiation,the photochemical reaction was happened between UV light and organic group,organic group was decomposed into active agent,which was insoluble in solvent,therefore,micro-patterned PZT film can be obtained by solvent washing.A novel method for fabrication of micro-patterned PZT logic storage cell was provided.