界面热阻对GaN HEMT自热效应的影响

The Effect of the Thermal Boundary Resistance on Self-Heating of GaN HEMT

主要研究了界面热阻对在大功率工作条件下的GaN HEMT的自热效应的影响。当GaN HEMT器件工作在大功率条件下时会产生自热效应使得自身温度升高,将会使得器件有源沟道温度升高,影响到器件的正常工作特性,产生温漂等一些列现象。计算了GaN HEMT器件不同材料界面之间的界面热阻,在此基础之上,进行三维建模,仿真了GaN HEMT器件在考虑界面热阻时的温度分布情况。

Ibis paper in- vestigated the influence of the thermal boundary resistance for the self - heating effect GaN HFET devices at high power operating conditions. The self - heating effect produced by GaN HFET device operating at high power con- ditions will make the temperature of the active channel layer increases, and affecting the operating characteristics of the device, such as temperature drift. This paper firstly analyzes the thermal boundary resistance between dif- ferent multi - finger GaN HEMT materials, and on this basis, makes a GaN HEMT 3D thermal model to analyze the temperature distribution of the device under given the dissipated power.