掺硼纳米硅颗粒的脉冲放电制备及测试分析

PREPARATION AND CHARACTERIZATION OF BORON DOPED SILICON NANOPARTICLES BY PULSED ELECTRICAL DISCHARGE

以掺硼硅锭(电阻率0.01Ω·cm)作为原材料,在液体介质中采用脉冲放电法制备出掺硼纳米硅颗粒。利用扫描电子显微镜(SEM)、X射线衍射(XRD)、纳米粒径电位分析(PSDA)、原子发射光谱(ICP-OES)等测试手段对获得的产物进行测试分析,绝大部分纳米硅颗粒尺寸集中在30~60 nm,其硼含量的质量分数为19×10-4%。在此基础上,将制备纳米硅颗粒配制为质量分数为15%的纳米硅浆料,通过丝网印刷在太阳硅片上,经850℃高温烧结后,硅片表面方阻可由100Ω□/降到30Ω□/。

In conjunction to this system,a method of preparing silicon nanoshperes from boron doped silicon ingot（resistivity 0.01 Ω · cm）by utilizing pulsed discharge in liquid,has been introduced. The characterization of thesesilicon nanoparticles with SEM,XRD,PSDA and ICP-OES shows that diameter of most silicon NPs is about 30-60 nm,and the boron content present is approximately 19×10^（-4）%. Test sample of nanosilicon paste consisting 15% of siliconnanoshperes is then prepared and screen-printed on silicon solar wafer. After being sintered at 850 ℃,the resultant solarwafer sheet resistance was measured to be decreased from 100 Ω/□ to 30 Ω/□.