基于真空铝预沉积工艺的高压晶闸管性能优化

Performance Optimization of High Voltage Thyristor Based on Vacuum Deposited Aluminum Diffusion Technology

在高压晶闸管器件的硅片参数设计时,制造过程中不同扩散工艺形成PN结的平坦性是重点考虑的因素之一。为了获得更优良的高压快速晶闸管器件动静态特性,文章从制造工艺入手,首先探讨了真空铝预沉积和闭管铝扩散工艺形成PN结的平坦性差异,然后通过理论计算与Silvaco仿真验证,得出了同一硅片厚度下器件转折电压随结深的变化关系,并基于PN结平坦性的考虑设计了两种工艺条件下的最小化硅片厚度。试验结果表明,采用真空铝预沉积工艺及与之对应的最佳硅片参数所研制的器件性能优化明显。

In the design of silicon parameters of high voltage thyristor device, the flatness of PN junction formed by different kinds of diffusion process is one of the key factors in the manufacturing. In order to obtain better dynamic and static characteristics of high voltage fast thyristor, starting with manufacturing process, the flatness difference of PN junction formed by vacuum deposited aluminum diffusion and close-tube aluminum diffusion process was discussed firstly, then through the theoretical calculation and Silvaco simulation, the relationship between the voltage of the device and the junction depth was obtained, and based on the consideration of the flatness of PN junction, the minimum thickness of silicon under two different conditions was designed. Experimental results showed that the performance optimization of the device was obvious based on the vacuum deposited aluminum diffusion technology and its optimum silicon parameters.