晶圆键合技术在LED应用中的研究进展

Research Progress of Wafer Bonding Technology for LEDs

简要介绍了晶圆键合技术在发光二极管(LED)应用中的研究背景,分别论述了常用的黏合剂键合技术、金属键合技术和直接键合技术在高亮度垂直LED制备中的研究现状,包括它们的材料组成和作用、工艺步骤和参数以及优缺点。其中,黏合剂键合是一种低温键合技术,且易于应用、成本低、引入应力小,但可靠性较差;金属键合技术能提供高热导、高电导的稳定键合界面,与后续工艺兼容性好,但键合温度高,引入应力大,易造成晶圆损伤;表面活化直接键合技术能实现室温键合,降低由于不同材料间热失配带来的负面影响,但键合良率有待提高。

The research background of wafer bonding technology in light-emitting diodes（ LEDs）application is briefly introduced.The research status of common adhesive bonding technology,metal bonding technology and direct bonding technology in high-brightness vertical LED fabrication are discussed respectively,including material composition and function,process steps and parameters,as well as advantages and disadvantages.The adhesive bonding is a low-temperature bonding technology with low cost,easy for application,and less stress introduced,but with insufficient reliability.The metal bonding technique can provide stable bonding interface with high thermal and electrical conductivity,and be well compatible with the subsequent processes.However,the high bonding temperature and large induced stress can easily result in wafer damage.The direct bonding technique of surface activation can realize room temperature bonding and reduce the negative effects of thermal mismatch between different materials,but the bonding yield needs to be improved.