摘要
The thermoelectric performances of 1 T-ZrX_2(X=S and Se) single layers were investigated using a combination of density functional calculations and semi-classical Boltzmann transport theory. Because of the high hole mobilities at 300 K, ultrahigh power factors(PF = S^2σ) were found in the P-type compounds;these values were ~ 11.95 and ~13.58 mWK ~2 m^1 for 1T-ZrS_2 and 1T-ZrSe_2 single layers, respectively.However, because of the Lorenz relation between the electrical conductivity(σ) and an electron's thermal conductivity(K_(el)) given by the Wiedemann-Franz law, the electronic figures of merit(Z_(el)T = PF T/K_(el)) at 300 K were approximately 0.67 and 0.75 for the N-and P-type 1T-ZrSe_2, respectively. In addition, the lattice thermal conductivities(K_(Ph)) were calculated, giving values of ~1.43 and ~0.97 W K ~1 m^1 for 1T-ZrS_2 and 1T-ZrSe_2 single layers, respectively. Therefore, because of the lower K_(Ph)/K_(el) ratio, the P-type 1T-ZrX_2 single layers possess higher fngure-of-merits(ZT = Z_(el)T/(1+(K_(Ph)/K_(el))) than their counterparts. This signifies that the P-type samples demonstrate better thermoelectric performance than the N-type ones. The thermoelectric properties of metastable 2H-ZrX_2(X = S and Se) single layers were also investigated.
The thermoelectric performances of 1T-ZrX2 (X = S and Se) single layers were investigated using a combination of density functional calculations and semi-classical Boltzmann transport theory. Because of the high hole mobilities at 300 K, ultrahigh power factors (PF = S^2δ) were found in the P-type compounds; these values were -11.95 and -13.58 rnW K^- 2 m^- 1 for 1 T-ZrS2 and 1 T-ZrSe2 single layers, respectively. However, because of the Lorenz relation between the electrical conductivity (σ) and an electron's thermal conductivity (Ket) given by the Wiedemann-Franz law, the electronic figures of merit (Zest - PF. T/Kel) at 300 K were approximately 0.67 and 0.75 for the N- and P-type IT-ZrSe2, respectively. In addition, the lattice thermal conductivities (t%h) were calculated, giving values of -1.43 and -0.97 W K^-1 m^-1 for 1T-ZrS2 and 1T-ZrSe2 single layers, respectively. Therefore, because of the lower kph/kel ratio, the P-type 1T-ZrX2 single layers possess higher figure-of-merits (ZT = ZesT/ (1 + kph/kel)) than their counterparts. This signifies that the P-type samples demonstrate better thermoelectric performance than the N-type ones. The thermoelectric properties of metastable 2H-ZrX2 (X= S and Se) single layers were also investigated.
基金
supported by the National Natural Science Foundation of China (61704044, 51606192, and 51372064)
Natural Science Foundation of Hebei Province (A2017201219)
CAS Pioneer Hundred Talents Program
supported by the High-Performance Computing Center of Hebei University
the Institute of Engineering Thermophysics,CAS