一种双通道射频接收前端

A High Integrated RF Receive Module

本文研究采用SOI(绝缘体上硅)工艺设计开关芯片,砷化镓(Ga As)工艺单片LNA,MCM(多芯片组装工艺)技术设计的双通道接收前端,在1~4GHz频带内插入损耗小于0.4d B,可通过CW功率5W,NF小于1.2d B,增益大于30d B,P-1d B大于10d Bm,尺寸为5mm×5mm的QFN封装。双通道射频接收前端可广泛应用于TDD通信系统。

Using SOI switch and GaAs LNA,the module is fabricated in MCM technology. The module has two independently channels.The module can control signals from 1.0 to 4.0 GHz with only 0.4 dB insertion loss. The module provides exceptional power handling performance：maximal input CW power=5W.The module housed in a leadless 5×5 mm plastic surface mount package. The module providing 30dB of a small signal gain,1.2 dB noise figure and output IP3 of ＋10 dBm. Being volume-produced,this switch has been used widely in TDD.