半导体微腔中腔模、重空穴激子模和轻空穴激子模耦合

Coupling between cavity mode and heavy-hole exciton and light-hole exciton in semiconductor microcavity

采用传输矩阵方法利用半经典的线性色散模型 ,计算半导体微腔内同时存在重空穴激子、轻空穴激子时 ,在不同入射角度下的反射谱 ,同时 ,利用三简谐振子耦合模型计算了在不同入射角度下 ,腔模同时和重空穴激子模、轻空穴激子模耦合所形成的三支腔极化激元的能量 ,以及腔模、重空穴激子模、轻空穴激子模分别在三支腔极化激元中所占的权重 ,结果表明随着入射角的增加腔极化激元的高能支和两个低能支之间存在明显的反交叉现象 ,同时 ,腔模和重空穴激子模。

The reflectivity spectra at different incident angles of semiconductor microcavity having heavy hole exciton and light hole exciton are calculated ly transfer matrix method using the linear dispersion model. Meanwhile we calculate the energy of three cavity polaritons at different incident angles formed by the coupling between cavity mode and the two exciton modes using the three harmonic oscillators coupling model, and the weights of cavity mode and the two exciton modes in the three cavity polaritons. The results indicate that there is obvious anticross between the high energy cavity polariton and the two low energy cavity polaritons with increasing incident angles, and the weights of three modes(cavity mode, heavy hole exciton mode and light hole exciton mode) in the three cavity polaritons increase or decrease.