小角x射线散射确定TiNi薄膜中晶化粒子的长大激活能

Determination of activation energy of growth of the crystalline particles in TiNi thin films by SAXS

用小角x射线散射技术研究以直流磁控溅射方法制备TiNi合金薄膜其退火生成的晶化粒子的长大行为 .发现在室温下溅射的TiNi合金薄膜存在小于 1nm尺寸的微空洞 ,将退火后薄膜的小角x射线散射强度扣除退火前微空洞产生的小角x射线散射强度 ,用这种方法得到的散射强度遵从Porod定律 ;而用通常方法扣除背底得到的散射强度结果不满足Porod定律 .TiNi合金薄膜在 733— 793K之间退火晶化粒子的长大激活能Eg=30 1kJ mol.

Small\|angle x\|ray Scattering(SAXS) has been used to study the growth behavior of the crystalline particles in TiNi thin films. The results show that the films deposited at ambient temperature may have micro-voids. The size of micro-void is smaller than 1nm. The new method was applied to the background correction of the SAXS intensities scattered by the TiNi films annealed at 773—793K for several durations. The activation energy of growth of crystalline particles was obtained.