半导体二次电子像中的掺杂衬度

Secondary electron dopant contrast in semiconductors

本文详细评述和介绍了近几年来国际上关于扫描电镜二次电子像中的掺杂衬度方面的实验和理论研究成果 ,总结了实验中发现的各种现象 ,并用电离能的观点对所有这些现象作出了理论上的解释 。

In this paper, we reviewed the experimental and theoretical research work on secondary electron dopant contrast in semiconductors in detail, which has been carried out in recent years mainly by two groups of Oxford and Cambridge University, UK, summarized the phenomena discovered in experiments and their interpretation in the view point of ionization energy, and pointed out their application prospects.