摘要
研究了 1 5.1 4MeV/u136 Xe离子在不同批次的 3 2k× 8bits静态存储器中所引起的单粒子效应 .获得了单粒子翻转和单粒子闭锁截面与入射角度的依赖关系 .将单粒子效应截面与灵敏区中沉积的能量相联系 ,而不是线性能量转移(LET)值 .估计了灵敏体积的深度和死层的厚度 .
Single event effects induced by 15.14MeV/u 136 Xe ions in different batches of 32 k ×8 bits static random access memory are studied. The incident angle dependences of the cross sections for single event upset and single event latchup are presented. The SEE cross sections are plotted versus energy loss instead of linear energy transfer value in sensitive region. The depth of sensitive volume and thickness of 'dead' layer above the sensitive volume are estimated.
出处
《高能物理与核物理》
CSCD
北大核心
2002年第9期904-908,共5页
High Energy Physics and Nuclear Physics
基金
国家自然科学基金 (1 9775 0 5 81 0 0 75 0 64)
中国科学院基金资助~~