分子标记辅助聚合抗小麦黄花叶病和白粉病育种

Pyramiding Disease Resistance to Wheat Yellow Mosaic Virus and Powdery Mildew by Molecular Marker-Assisted Selection

抗白粉病基因Pm21和PmV定位于不同簇毛麦种质的6VS染色体臂,对已知白粉病生理小种均表现高抗。小麦-簇毛麦小片段顶端易位系NAU421(T4VS-4DS·4DL)携带Wss1基因,高抗小麦黄花叶病。为选育兼抗小麦黄花叶病和白粉病的育种新材料,以NAU421为亲本,分别与携有Pm21基因的品系Y16-Pm和携有PmV基因的品种扬麦22杂交,构建F2代分离群体,然后利用与Wss1和Pm21/PmV基因连锁的共显性分子标记CINAU301和MBH1对F2代进行检测。结果表明,在286个NAU421/Y16-Pm的F2单株中,同时携有纯合Wss1和Pm21基因的单株有18株,比例为6.38%;在232个NAU421/扬麦22的F2单株中,同时携有纯合Wss1和PmV基因的单株有5株,比例为2.16%。细胞学与分子标记鉴定结果一致,说明CINAU301和MBH1可用于对Wss1和Pm21/PmV基因的高效选择。F3代株系抗病性鉴定表明,筛选出的23个双抗基因聚合体对白粉病免疫并高抗黄花叶病,可用于下一步双抗聚合品种(系)的筛选或作为抗病中间亲本。

Both Pro21 and PmV, located on the chromosome 6VS from different Haynaldia villosa germplasms, confer high resistance to all current Blumeria grarninis f. sp. tritici （Bgt） races. NAU421, a terminal translocation line carrying WssJ ,is highly resistant to wheat yellow mosaic virus （WYMV）. To develop wheat lines pyramiding resistant to WYMV and powdery mildew,in this study, NAU421 was crossed with Y16-Pm,an advanced wheat line carrying Pm21, and Yangmai 22 carrying PmV, respectively. Two co-dominant markers CINAU301 linked with Wssl and MBH1 linked with Pm21/Pm V were used to detect the two F2 populations. In the NAU421/Y16-Pm F2 population contai-ning 286 plants, 18 individuals pyramiding homozygous Wssl andPm21 were identified,which took up 6.38% of the whole F2 population. Meanwhile,5 individuals pyramiding homozygous Wssl and PmV were identified in the NAU421/Yangmai 22 F2 population containing 232 plants,resulting in a rate of 2.16%. The results of cytogenetic analysis on these pyramiding lines were consistent with molecular marker identification,indicating that the tightly linked markers CINAU301 and MBH1 were powerful tools for the identification of Wssl andPm21/PmV in breeding program. By resistance test,all the 23 pyramiding lines were highly resistant to powdery mildew and WYMV. In general,these lines pyramiding resistance genes developed in this study could be used as intergraded breeding parents for resistance development.