线速度对金刚石线锯及硅片表面质量的影响

Influence of wire speed on diamond wire saw and surface quality of silicon wafer

为了考察线速度对金刚石线锯切割过程的影响,研究了不同线速度条件下金刚石线锯的磨损情况以及硅片表面质量情况,通过SEM及粗糙度仪对切后线材、硅片等进行微观及量化分析。结果表明:线速度由1 300m/min提高至1 800 m/min,金刚石线锯磨损量由3.5μm逐渐降低到2.5μm,降幅为28.6%;金刚石线锯切割硅材料为塑性及脆性模式混合去除,硅片表面的形貌呈现沟槽状、连续划痕并伴随大量凹坑;随着线速度的增加,硅片表面粗糙度逐渐减小,算数平均粗糙度R_a、最大高度R_z以及最大表面粗糙度R_t数值分别下降了33.7%、37.8%、45.6%,表面凹坑数量随着线速度的增大也逐渐减少。

The wear of wire and the surface quality of silicon wafer under different wire speeds were studied. The micro and quantitative analysis of the used wire and silicon wafer was investigated by SEM and roughness instrument. The results showed that the smaller the wear of diamond wire with the wire speed increasing from 3.5μm to 2.5μm ; ; diamond wire cutting silicon materials for plastic and brittle mixed mode of removal of silicon surface profile showed a continuous groove, accompanied by a large number of scratches and pits, with the wire speed increasing the surface roughness of silicon wafer was gradually decreased, Ra,Rz and Rt decreased by 33.7%,37.8%,45.6%, the number of surface pits also gradually reduced.