氧化锌薄膜的微观结构及其结晶性能研究

Microsructure and Crystalline Characteristics of Zinc Oxide Thin Films

以普通玻璃作为衬底材料,采用射频磁控溅射方法制备了氧化锌(ZnO)透明导电薄膜,通过X射线衍射(XRD)和X射线光电子能谱(XPS)测试,研究了衬底温度对薄膜微观结构及其结晶性能的影响.结果表明:所制备的ZnO薄膜均为(002)晶面择优取向生长的多晶薄膜,其微观结构和结晶性能与衬底温度密切相关.衬底温度对ZnO薄膜的织构系数TC(hkl)、平均晶粒尺寸、位错密度、晶格应变和晶格常数都具有不同程度的影响,当衬底温度为800 K时,ZnO薄膜样品的织构系数TC(002)最高(4.929)、平均晶粒尺寸最大(20.91 nm)、位错密度最小(2.289×10^(15)line·m^(-2))、晶格应变最低(2.781×10^(-3)),具有最高的(002)晶面择优取向生长性和最佳的微观结构性能.

The transparent conducting oxide thin films of zinc oxide（ZnO） were deposited on glass substrates by radiofrequency magnetron sputtering method.The influence of substrate temperature on the mirostructure and crystalline characteristics of ZnO thin films was investigated by X-ray diffraction（XRD） and X-ray photoelectron spectroscopy（XPS）,respectively.The results indicate that the deposited thin films with the hexagonal crystal structure are polycrystalline and have a strongly preferred orientation of（002） plane.The mirostructure and crystalline characteristics of the thin films are observed to be subjected to the substrate temperature.When the substrate temperature is 800 K,the deposited ZnO sample exhibits the best crystalline and microstructural properties,with the highest texture coefficient of（002） plane of 4.929,the largest average grain size of 20.91 nm,the minimum dislocation density of 2.289 × 10^15 line·m^-2 and the lowest lattice strain of 2.781 × 10^-3.