暂态抑制二极管的分布电容与外加电压关系分析

Analysis on the Relationship between Distributed Capacitance and Applied Voltage of Transient Voltage Suppressor

针对暂态抑制二极管(transient voltage suppressor,TVS)的分布电容与外加电压关系问题,通过对暂态抑制二极管分布电容的理论分析,采用对TVS两端施加反向电压测量其分布电容的方法,利用理论与试验相结合的方法,试验得出:功率为1500 W,参考电压从6.8 V到39 V的TVS的静态分布电容的总体趋势随参考电压增大而减小;外加反偏电压在0 V到反向击穿电压范围内,TVS的分布电容随着外加反偏电压的增大而减小;1.5KE系列的TVS的内建电势为一定值,试验所得约为1.51 V,与参考电压、分布电容以及外加反偏电压均无关,这对TVS在实际中的应用具有一定的指导意义。

For the issue of the relationship between distributed capacitance and the applied voltage of transient voltage suppressor （TVS）, through the analysis of the theory of transient suppression diode ca- pacitance, and by measuring distributed capacitance of the TVS applied reverse voltage on both ends and using the method of combining the theory and experiment, the experiment conclusions are as follows： The overall trend is that the static capacitance of the TVS whose power is 1500 W and reference voltage is from 6.8 V to 39 V decreases with the reference voltage; Distributed capacitance decreases with the in- crease of reverse bias voltage when the reverse bias voltage is in the range of 0 V to reverse breakdown voltage; The built-in electric potential of the 1.5 KE series of TVS is a certain value, about 1.51 V, which has nothing to do with the reference voltage, distributed capacitance and reverse bias voltage, which has a certain value in practical application.